Temperature dependence of impact ionization in InAs.
Identifieur interne : 000336 ( Main/Exploration ); précédent : 000335; suivant : 000337Temperature dependence of impact ionization in InAs.
Auteurs : RBID : pubmed:23571953English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Arsenicals, Indium.
- Computer Simulation, Electromagnetic Fields, Ions, Models, Chemical, Semiconductors, Temperature.
Abstract
An Analytical Band Monte Carlo model was used to investigate the temperature dependence of impact ionization in InAs. The model produced an excellent agreement with experimental data for both avalanche gain and excess noise factors at all temperatures modeled. The gain exhibits a positive temperature dependence whilst the excess noise shows a very weak negative dependence. These dependencies were investigated by tracking the location of electrons initiating the ionization events, the distribution of ionization energy and the effect of threshold energy. We concluded that at low electric fields, the positive temperature dependence of avalanche gain can be explained by the negative temperature dependence of the ionization threshold energy. At low temperature most electrons initiating ionization events occupy L valleys due to the increased ionization threshold. As the scattering rates in L valleys are higher than those in Γ valley, a broader distribution of ionization energy was produced leading to a higher fluctuation in the ionization chain and hence the marginally higher excess noise at low temperature.
PubMed: 23571953
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Temperature dependence of impact ionization in InAs.</title><author><name sortKey="Sandall, Ian C" uniqKey="Sandall I">Ian C Sandall</name><affiliation wicri:level="1"><nlm:affiliation>Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin building, Mappin Street, Sheffield, S1 3JD, UK. I.sandall@sheffield.ac.uk</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin building, Mappin Street, Sheffield, S1 3JD</wicri:regionArea></affiliation></author><author><name sortKey="Ng, Jo Shien" uniqKey="Ng J">Jo Shien Ng</name></author><author><name sortKey="Xie, Shiyu" uniqKey="Xie S">Shiyu Xie</name></author><author><name sortKey="Ker, Pin Jern" uniqKey="Ker P">Pin Jern Ker</name></author><author><name sortKey="Tan, Chee Hing" uniqKey="Tan C">Chee Hing Tan</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:23571953</idno><idno type="pmid">23571953</idno><idno type="wicri:Area/Main/Corpus">000691</idno><idno type="wicri:Area/Main/Curation">000691</idno><idno type="wicri:Area/Main/Exploration">000336</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Computer Simulation</term><term>Electromagnetic Fields</term><term>Indium (chemistry)</term><term>Ions</term><term>Models, Chemical</term><term>Semiconductors</term><term>Temperature</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Indium</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term><term>Electromagnetic Fields</term><term>Ions</term><term>Models, Chemical</term><term>Semiconductors</term><term>Temperature</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An Analytical Band Monte Carlo model was used to investigate the temperature dependence of impact ionization in InAs. The model produced an excellent agreement with experimental data for both avalanche gain and excess noise factors at all temperatures modeled. The gain exhibits a positive temperature dependence whilst the excess noise shows a very weak negative dependence. These dependencies were investigated by tracking the location of electrons initiating the ionization events, the distribution of ionization energy and the effect of threshold energy. We concluded that at low electric fields, the positive temperature dependence of avalanche gain can be explained by the negative temperature dependence of the ionization threshold energy. At low temperature most electrons initiating ionization events occupy L valleys due to the increased ionization threshold. As the scattering rates in L valleys are higher than those in Γ valley, a broader distribution of ionization energy was produced leading to a higher fluctuation in the ionization chain and hence the marginally higher excess noise at low temperature.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23571953</PMID><DateCreated><Year>2013</Year><Month>04</Month><Day>10</Day></DateCreated><DateCompleted><Year>2013</Year><Month>09</Month><Day>19</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>21</Volume><Issue>7</Issue><PubDate><Year>2013</Year><Month>Apr</Month><Day>8</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Temperature dependence of impact ionization in InAs.</ArticleTitle><Pagination><MedlinePgn>8630-7</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.21.008630</ELocationID><Abstract><AbstractText>An Analytical Band Monte Carlo model was used to investigate the temperature dependence of impact ionization in InAs. The model produced an excellent agreement with experimental data for both avalanche gain and excess noise factors at all temperatures modeled. The gain exhibits a positive temperature dependence whilst the excess noise shows a very weak negative dependence. These dependencies were investigated by tracking the location of electrons initiating the ionization events, the distribution of ionization energy and the effect of threshold energy. We concluded that at low electric fields, the positive temperature dependence of avalanche gain can be explained by the negative temperature dependence of the ionization threshold energy. At low temperature most electrons initiating ionization events occupy L valleys due to the increased ionization threshold. As the scattering rates in L valleys are higher than those in Γ valley, a broader distribution of ionization energy was produced leading to a higher fluctuation in the ionization chain and hence the marginally higher excess noise at low temperature.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Sandall</LastName><ForeName>Ian C</ForeName><Initials>IC</Initials><Affiliation>Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin building, Mappin Street, Sheffield, S1 3JD, UK. I.sandall@sheffield.ac.uk</Affiliation></Author><Author ValidYN="Y"><LastName>Ng</LastName><ForeName>Jo Shien</ForeName><Initials>JS</Initials></Author><Author ValidYN="Y"><LastName>Xie</LastName><ForeName>Shiyu</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Ker</LastName><ForeName>Pin Jern</ForeName><Initials>PJ</Initials></Author><Author ValidYN="Y"><LastName>Tan</LastName><ForeName>Chee Hing</ForeName><Initials>CH</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Ions</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Computer Simulation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electromagnetic Fields</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Ions</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Models, Chemical</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>4</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>4</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>9</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">251898</ArticleId><ArticleId IdType="pubmed">23571953</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV2/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000336 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000336 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV2
|flux= Main
|étape= Exploration
|type= RBID
|clé= pubmed:23571953
|texte= Temperature dependence of impact ionization in InAs.
}}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i -Sk "pubmed:23571953" \
| HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd \
| NlmPubMed2Wicri -a IndiumV2
| This area was generated with Dilib version V0.5.76. |  |